APT50GF120B2R

APT50GF120B2R APT50GF120LR 1200V APT50GF120B2R 80A TO-264 (LR) Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. T-Max™ (B2R) Low Forward Voltage Drop Low Tail Current Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated G C E G C C E APT50GF120LR G E All Ratings: TC = 25°C unless otherwise specified. APT50GF120B2R/LR UNIT 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current 1 1 1200 15 ±20 80 50 160 100 85 390 -55 to 150 300 Volts @ TC = 25°C @ TC = 90°C 2 Amps IM Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions PR EL TYP MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collect...