Power MOSFET
500V 30A 0.170W
APT5017BLC APT5017SLC
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate c...
Description
500V 30A 0.170W
APT5017BLC APT5017SLC
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Identical Specifications: TO-247 or Surface Mount D3PAK Package Lower Gate Charge & Capacitance Easier To Drive 100% Avalanche Tested Faster switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
SLC
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT5017 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F AD IN
500 30 120 ±30 ±40 370 2.96 300 30 30 -55 to 150
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts ...
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