Power MOSFET
APT5014BLL APT5014SLL
500V 35A 0.140Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage,...
Description
APT5014BLL APT5014SLL
500V 35A 0.140Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
D3PAK
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package
D
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT5014BLL-SLL
UNIT
VDSS ID IDM
VGS VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
500 35 140 ±30 ±40 403 3.22
Volts Amps
Volts Watts W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 35 30 1300
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = ...
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