Power MOSFET
APT5010LVFR
500V 47A 0.100Ω
POWER MOS V ®
FREDFET
TO-264
Power MOS V® is a new generation of high voltage N-Channel e...
Description
APT5010LVFR
500V 47A 0.100Ω
POWER MOS V ®
FREDFET
TO-264
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
100% Avalanche Tested Popular TO-264 Package
G
FREDFET
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT5010LVFR UNIT Volts Amps
500 47 188 ±30 ±40 520 4.16 -55 to 150 300 47 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 47 0.100 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA...
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