Power MOSFET
APT5010JVRU3
500V 44A 0.100Ω
S G D A
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhanceme...
Description
APT5010JVRU3
500V 44A 0.100Ω
S G D A
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
2 T-
27
"UL Recognized"
ISOTOP®
Faster Switching Lower Leakage Single Die MOSFET & FRED
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
100% Avalanche Tested Popular SOT-227 Package PFC "Buck" Configuration
G
D A S
All Ratings: TC = 25°C unless otherwise specified.
APT5010JVRU3 UNIT Volts Amps
500 44 176 ±30 ±40 450 3.6 -55 to 150 300 44 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 44 0.100 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-St...
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