APT40M90JN

D S G D S G S SO 2 T- 27 APT40M75JN 400V 56.0A 0.075Ω APT40M90JN 400V 51.0A 0.090Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 40M75JN APT 40M90JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400 56 224 ± 30 520 4.16 400 51 204 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current 2 MIN APT40M75JN APT40M90JN APT40M75JN APT40M90JN APT40M75JN APT40M90JN TYP MAX UNIT Volts 400 400 56 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 51 0.075 Ohms RDS(ON) 0.090 250 1000 ± 100 2 4 µA nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5mA) THERMAL CHARACTERISTICS Symbol ...