APT30M75BLL

APT30M75BLL APT30M75SLL 300V 44A 0.075Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering R and Qg. Power MOS 7® combines lower conduction and switching DS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. TO-247 Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package D3PAK SLL D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT30M75 300 44 176 ±30 ±40 329 2.63 -55 to 150 300 44 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 ID(on) On State Drain Current 2 (VDS > ID(o...