APT30M61BLL

APT30M61BLL APT30M61SLL 300V 54A 0.061Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Increased Power Dissipation TO-247 D3PAK D Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Easier To Drive TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT30M61BLL-SLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 300 Volts 54 Amps 216 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 403 Watts 3.23 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 54 30 1300 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 ...