Power MOSFET
APT30M36B2LL APT30M36LLL
300V 84A 0.036Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high volta...
Description
APT30M36B2LL APT30M36LLL
300V 84A 0.036Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering and Qg. Power MOS 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package
T-MAX™
TO-264
D G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
VDSS ID IDM
VGS VGSM
PD
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
APT30M36B2LL_LLL 300 84 336 ±30 ±40 568 4.55
-55 to 150 300 84 50 2500
UNIT Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V...
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