Document
APT20M34BLL APT20M34SLL
200V 74A 0.034W
BLL D3PAK
TO-247
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20M34 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T C MA N A OR V AD INF
200 74 296 ±30 ±40 400 3.2 300 74 30
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
-55 to 150
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
200 74 0.034 25 250 3 5 ±100
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA
1-2001 050-7008 Rev -
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M34 BLL - SLL
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
3440 1160 88 85 26 47 11 18 26 12
nC pF
Gate-Source Charge
Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current
1
Diode Forward Voltage
L A C I N H C N E T O I E T C MA N A OR V AD INF
VDD = 0.5 VDSS.