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APT20GT60AR Dataheets PDF



Part Number APT20GT60AR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Datasheet APT20GT60AR DatasheetAPT20GT60AR Datasheet (PDF)

APT20GT60AR 600V 30A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. TO-3 (TO-204AE) • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated • Hermetic Package MAXIMUM RATINGS Symbol V CES VCGR V EC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Cur.

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APT20GT60AR 600V 30A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. TO-3 (TO-204AE) • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated • Hermetic Package MAXIMUM RATINGS Symbol V CES VCGR V EC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G E C All Ratings: TC = 25°C unless otherwise specified. APT20GT60AR UNIT Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A N I M I L E R P 600 600 15 ±20 30 20 60 40 40 @ TC = 25°C Volts Amps mJ Watts °C 140 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500µA, Tj = 25°C) MIN TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 6-2000 050-5969 Rev - Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) I CES I GES 1000 ±100 µA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20GT60AR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25°C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 1100 110 65 95 40 8 10 34 115 125 15 15 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off De.


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