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APT20GF120KR Dataheets PDF



Part Number APT20GF120KR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Fast IGBT is a new generation of high voltage power IGBTs.
Datasheet APT20GF120KR DatasheetAPT20GF120KR Datasheet (PDF)

APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 20KHz • Ultra Low Leakage Current • RBSOA and SCSO.

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APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 20KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. APT20GF120KR UNIT 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current 1 1 1200 15 ±20 32 20 64 40 22 200 -55 to 150 300 Volts @ TC = 25°C @ TC = 90°C 2 Amps IM Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions PR EL TYP MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) 1200 -15 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 ±100 mA nA 052-6205 Rev C Volts I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20GF120KR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.50VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10Ω I C = I C2 MIN TYP MAX UNIT 1100 110 70 95 13 55 17 75 95 170 20 35 175 90 1.2 1.3 2.5 1500 165 105 150 20 85 nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time RY MIN ns IN A 30 70 260 135 ns IM EL Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time mJ PR Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +25°C VCE = 20V, I C = 15A 20 35 150 90 2.3 12 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance THERMAL CHARACTERISTICS Symbol RΘJC RΘJA Torque 1 2 3 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw TYP MAX UNIT °C/W lb•in 0.63 80 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = 15A, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6205 Rev C APT20GF120KR PRELIMINARY Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 220 W A Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 32 Ptot 180 160 140 120 IC 24 20 16 100 80 60 40 4 20 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 12 8 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 t = 9.0µs p 10 µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 1 100 µs ZthJC 10 -1 D = 0.50 0.20 10 0 1 ms 10 -2 0.10 0.05 10 ms single pulse 0.02 0.01 DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Bend, Oregon 97702-1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6205 Rev C VCE tp APT20GF120KR PRELIMINARY Typ. gate charge VGE = ƒ(QGate) 16A A parameter: IC puls = 15 20 V nF Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 VGE 16 14 12 10 8 C 600 V 800 V 10 0 C Ciss ies .


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