Document
APT20GF120KR
1200V 32A
Fast IGBT
TO-220
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • Low Tail Current • Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
• High Freq. Switching to 20KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated
G
C
E
C G E
All Ratings: TC = 25°C unless otherwise specified.
APT20GF120KR UNIT
1200
RY A IN
MIN
Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current
1 1
1200 15 ±20 32 20 64 40 22 200 -55 to 150 300
Volts
@ TC = 25°C @ TC = 90°C
2
Amps
IM
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts °C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions
PR EL
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
1200 -15 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 ±100
mA nA
052-6205 Rev C
Volts
I CES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20GF120KR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.50VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10Ω I C = I C2 MIN TYP MAX UNIT
1100 110 70 95 13 55 17 75 95 170 20 35 175 90 1.2 1.3 2.5
1500 165 105 150 20 85
nC pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
RY
MIN
ns
IN
A
30 70 260 135
ns
IM EL
Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
mJ
PR
Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +25°C VCE = 20V, I C = 15A
20 35 150 90 2.3 12
mJ S ns
Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
THERMAL CHARACTERISTICS
Symbol RΘJC RΘJA Torque
1 2 3
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
TYP
MAX
UNIT °C/W lb•in
0.63 80 10
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = 15A, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6205 Rev C
APT20GF120KR
PRELIMINARY
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
220 W A
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
32
Ptot
180 160 140 120
IC
24
20
16 100 80 60 40 4 20 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 12
8
TC
TC
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
t = 9.0µs p 10 µs
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
A
K/W
IC
10 1
100 µs
ZthJC
10 -1
D = 0.50 0.20 10 0
1 ms
10 -2
0.10 0.05
10 ms
single pulse
0.02 0.01
DC 10 -1 0 10 10
1
10
2
10
3
V
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Bend, Oregon 97702-1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364
USA
405 S.W. Columbia Street
052-6205 Rev C
VCE
tp
APT20GF120KR
PRELIMINARY
Typ. gate charge VGE = ƒ(QGate) 16A A parameter: IC puls = 15
20 V nF
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
VGE
16 14 12 10 8
C
600 V
800 V
10 0
C Ciss ies
.