Document
APT15GT60BR
600V 31A
Thunderbolt IGBT™
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • Low Tail Current • Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
• High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated
G
C
E
C
G E
All Ratings: TC = 25°C unless otherwise specified.
APT15GT60BR UNIT
600
RY A IN
MIN
Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current
1 1
600 15 ±20 31 15 60 30 24 135 -55 to 150 300
Volts
@ TC = 25°C @ TC = 110°C
2
Amps
M
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts °C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Symbol BVCES RBVCES VGE(TH) VCE(ON)
Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 400µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
PR
STATIC ELECTRICAL CHARACTERISTICS
EL I
TYP
MAX
UNIT
600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 ±100
µA nA
052-6209 Rev B
Volts
I CES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT15GT60BR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.80VCES RG = 10Ω I C = I C2 MIN TYP MAX UNIT
825 90 52 73 33 6 9 28 85 110 13 7 155 45 0.15 40 0.55
mJ ns ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
IM EL
Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
PR
Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +25°C VCE = 20V, I C = I C2
IN
A
RY
3
MIN
13 7 130 25 24
11 mJ S ns
Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
THERMAL CHARACTERISTICS
Symbol RΘJC RΘJA Torque
1 2 3
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
TYP
MAX
UNIT °C/W lb•in
0.93 40 10
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6209 Rev B
.