high voltage power IGBT
APT12GT60BR
600V 25A
Thunderbolt IGBT™
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...
Description
APT12GT60BR
600V 25A
Thunderbolt IGBT™
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
Low Forward Voltage Drop Low Tail Current Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
High Freq. Switching to 150KHz Ultra Low Leakage Current RBSOA and SCSOA Rated
G
C
E
C
G E
All Ratings: TC = 25°C unless otherwise specified.
APT12GT60BR UNIT
600
RY A IN
MIN
Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 115°C Pulsed Collector Current Pulsed Collector Current
1 1
600 15 ±20 25 12 50 24 18 125 -55 to 150 300
Volts
@ TC = 25°C @ TC = 115°C
2
Amps
M
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts °C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Symbol BVCES RBVCES VGE(TH) VCE(ON)
Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collect...
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