APT10M19BVFR

APT10M19BVFR 100V 75A 0.019Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode Lower Leakage Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage 100% Avalanche Tested FREDFET D G S Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT10M19BVFR UNIT Volts Amps 100 5 Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 75 300 ±30 ±40 370 2.96 -55 to 150 300 75 30 1500 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 100 75 0.019 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...