DatasheetsPDF.com

APT10M11LVR

Advanced Power Technology
Part Number APT10M11LVR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10M11LVR 100V 100A 0.011Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode ...
Datasheet PDF File APT10M11LVR PDF File

APT10M11LVR
APT10M11LVR

Overview
APT10M11LVR 100V 100A 0.
011Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
.
TO-264 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-264 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 5 All Ratings: TC = 25°C unless otherwise specified.
APT10M1LVR UNIT Volts Amps 100 100 400 ±30 ±40 520 4.
16 -5...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)