APT1002RCN

D TO-254 G S APT1002RCN 1000V 5.5A 2.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT1002RCN UNIT Volts Amps 1000 5.5 22 ±30 150 1.2 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 5.5 2.00 250 1000 ±100 2 (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 4 SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. MIN TYP MAX UNIT Watts 150 150 5.5 Amps 050-0015 Rev C CAU...