MOSFET
APT10025JLC
1000V 34A
S G D
0.250W
S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltag...
Description
APT10025JLC
1000V 34A
S G D
0.250W
S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Lower Gate Charge Faster Switching 100% Avalanche Tested
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Lower Input Capacitance Easier To Drive Popular SOT-227 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10025JLC UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
1000 34 136 ±30 ±40 700 5.6 -55 to 150 300 34 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
...
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