APL1001P

D P-Pack G S APL1001P 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APL1001P UNIT Volts Amps 1000 18 72 ±30 520 4.16 -55 to 150 and Inductive Current Clamped Volts Watts W/°C °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 18 0.60 25 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Ohms µA Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA Volts THERMAL CHARACTERISTICS Symbol RQJC RQCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT °C/W 0.24 0.06 8-2001 050-5899 Rev - CAUTION: These Devices are Sens...