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TDA7021T Dataheets PDF



Part Number TDA7021T
Manufacturers NXP
Logo NXP
Description FM radio circuit
Datasheet TDA7021T DatasheetTDA7021T Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET TDA7021T FM radio circuit for MTS Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification FM radio circuit for MTS GENERAL DESCRIPTION TDA7021T The TDA7021T integrated radio receiver circuit is for portable radios, stereo as well as mono, where a minimum of periphery is important in terms of small dimensions and low cost. It is fully compatible for applications using the low-voltage micro tuning system (.

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INTEGRATED CIRCUITS DATA SHEET TDA7021T FM radio circuit for MTS Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification FM radio circuit for MTS GENERAL DESCRIPTION TDA7021T The TDA7021T integrated radio receiver circuit is for portable radios, stereo as well as mono, where a minimum of periphery is important in terms of small dimensions and low cost. It is fully compatible for applications using the low-voltage micro tuning system (MTS). The IC has a frequency locked loop (FLL) system with an intermediate frequency of 76 kHz. The selectivity is obtained by active RC filters. The only function to be tuned is the resonant frequency of the oscillator. Interstation noise as well as noise from receiving weak signals is reduced by a correlation mute system. Special precautions have been taken to meet local oscillator radiation requirements. Because of the low intermediate frequency, low pass filtering of the MUX signal is required to avoid noise when receiving stereo. 50 kHz roll-off compensation, needed because of the low pass characteristic of the FLL, is performed by the integrated LF amplifier. For mono application this amplifier can be used to directly drive an earphone. The field-strength detector enables field-strength dependent channel separation control. Features • RF input stage • Mixer • Local oscillator • IF amplifier/limiter • Frequency detector • Mute circuit • MTS compatible QUICK REFERENCE DATA PARAMETER Supply voltage (pin 4) Supply current RF input frequency Sensitivity (e.m.f.) for −3 dB limiting Signal handling (e.m.f.) AF output voltage source impedance = 75 Ω; mute disabled source impedance = 75 Ω EMF EMF Vo − − − 4 200 90 − − − µV mV mV VP = 3 V CONDITIONS SYMBOL VP = V4-3 l4 frf − 1,5 MIN. 1,8 − 6,3 − TYP. MAX. 6,0 − 110 UNIT V mA MHz • Loop amplifier • Internal reference circuit • LF amplifier for − mono earphone amplifier or − MUX filter • Field-strength dependent channel separation control facility PACKAGE OUTLINE 16-lead mini-pack; plastic (SO 16; SOT109A); SOT109-1; 1996 July 24. May 1992 2 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... May 1992 3 Product specification Fig.1 Block diagram. Philips Semiconductors FM radio circuit for MTS TDA7021T Philips Semiconductors Product specification FM radio circuit for MTS RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER Supply voltage (pin 4) Oscillator voltage Storage temperature range Operating ambient temperature range CONDITIONS V5-4 Tstg Tamb SYMBOL VP = V4-3 − VP−0,5 −55 −10 MIN. TDA7021T MAX. 7,0 VP + 0,5 +150 +70 UNIT V V °C °C THERMAL RESISTANCE From junction to ambient DC CHARACTERISTICS VP = 3 V, Tamb = 25 °C, measured in circuit of Fig.4, unless otherwise specified PARAMETER Supply voltage (pin 4) Supply current Oscillator current Voltage at pin 13 Output voltage (pin 14) VP = 3 V CONDITIONS I4 I5 V13-3 V14-3 SYMBOL VP = V4-3 − − − − MIN. 1,8 TYP. 3,0 6,3 250 0,9 1,3 − − − − MAX. 6,0 UNIT V mA µA V V Rth j-a 300 K/W Fig.2 Supply current as a function of the supply voltage. May 1992 4 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T AC CHARACTERISTICS (MONO OPERATION) VP = 3 V; Tamb = 25 °C; measured in Fig.5; frf = 96 MHz modulated with ∆f = ±22,5 kHz; fm = 1 kHz; EMF = 0,3 mV (e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified PARAMETER Sensitivity (e.m.f.) for −3 dB limiting for −3 dB muting for (S+N)/N = 26 dB Signal handling (e.m.f.) Signal-to-noise ratio Total harmonic distortion AM suppression of output voltage ratio of AM signal (fm = 1 kHz; m = 80%) to FM signal (fm = 1 kHz; ∆f = 75 kHz) Ripple rejection Oscillator voltage (r.m.s. value) Variation of oscillator frequency with temperature VP = 1 V ∆ f osc ---------------∆T amb S+300 S−300 AFC range Mute range Audio bandwidth ∆Vo = 3 dB; measured with 50 µs pre-emphasis AF output voltage (r.m.s. value) AF output current max. d.c. load max. a.c. load (peak value) THD = 10% Io(dc) Io(ac) −100 − − 3 +100 − µA mA RL (pin 14) = 100 Ω Vo(rms) − 90 − mV B − 10 − kHz ±∆frf ±∆frf − 5 − kHz/°C ∆VP = 100 mV; f = 1 kHz RR V5-4(rms) − − 30 250 − − dB mV AMS − 50 − dB ∆f = ± 22,5 kHz ∆f = ± 75 kHz THD < 10%; ∆f = ± 75 kHz EMF (S+N)/N THD THD − − − − 200 60 0,7 2,3 − − − − mV dB % % CONDITIONS see Fig.3 muting disabled EMF EMF EMF − − − 4,0 5,0 7,0 − − − µV µV µV SYMBOL MIN. TYP. MAX. UNIT Selectivity see Fig.9; no modulation − − − − 46 30 160 120 − − − − dB dB kHz kHz.


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