TD9944

TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features ► Dual N-channel devices ► Low threshold – 2.0V max. ► High input impedance ► Low input capacitance – 125pF max. ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ► Logic level interfaces – ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Package Option Device 8-Lead SOIC 4.90x3.90mm body 1.75mm height (max) 1.27mm pitch TD9944 TD9944TG-G -G indicates package is RoHS compliant (‘Green’) BVDSS/BVDGS (V) 240 RDS(ON) (max) (Ω) 6.0 ID(ON) (min) (A) 1.0 VGS(th) (max) (V) 2.0 P...