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TD62M3600F

Toshiba

3CH LOW SATURATION VOLTAGE SOURECE DRIVER

TD62M3600F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M3600F 3CH LOW SATURATION VOLTAGE SOURCE DRIVER TD...


Toshiba

TD62M3600F

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Description
TD62M3600F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M3600F 3CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M3600F is multi chip driver IC incorporates 3 low saturation voltage discrete PNP transistors which equipped bias resistor and fly−wheeling diode. FEATURES l Built−in fly−wheeling diode l Built−in bias resistor : R = 10 kΩ (Typ.) l SSOP10 (1 mm pitch) small package sealed l Low saturation voltage VCE (sat) = 0.16 V (Typ.) at IO = −1 A VCE (sat) = 0.28 V (Typ.) at IO = −2 A BLOCK DIAGRAM Weight: 0.10 g (Typ.) PIN CONNECTION 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Supply Voltage Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Output Transistor Current Base Current Diode Forward Current Power Dissipation Junction Temperature Operating Temperature Storage Temperature VCC VCBO VCEO VEBO IO IO (PEAK) IB IB (PEAK) IF PD Tj Topr Tstg −10 −10 −10 −6 −2 −4 (Note 1) −0.4 −0.8 (Note 1) −2 (Note 2) 590 150 −40~85 −55~150 Note 1: T = 10 ms Max. and maximum duty is less than 30% Note 2: T = 10 ms single pulse UNIT V V V V A / ch A A mW °C °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Current Gain Saturation Voltage Transition Frequency Leakage Current Diode Forward Voltage Base−Emitter Resistance Base−Emitter Forward Voltage SYMBOL hFE (1) hFE (2) VCE (sat) fT IOL VF RBE VBE TEST CIR− CUIT TEST CONDITION ― VCE = 1 V, IC = 0.5 A ― VCE = 1 V, IC = 2.0 A ― IC = 1 A, IB = 25 mA IC = 2 A, IB...




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