TD62M3600F
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP
TD62M3600F
3CH LOW SATURATION VOLTAGE SOURCE DRIVER
TD...
TD62M3600F
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP
TD62M3600F
3CH LOW SATURATION VOLTAGE SOURCE DRIVER
TD62M3600F is multi chip driver IC incorporates 3 low saturation voltage discrete
PNP transistors which equipped bias resistor and fly−wheeling diode.
FEATURES
l Built−in fly−wheeling diode l Built−in bias resistor : R = 10 kΩ (Typ.) l SSOP10 (1 mm pitch) small package sealed l Low saturation voltage
VCE (sat) = 0.16 V (Typ.) at IO = −1 A VCE (sat) = 0.28 V (Typ.) at IO = −2 A
BLOCK DIAGRAM
Weight: 0.10 g (Typ.)
PIN CONNECTION
1 2001-07-05
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Supply Voltage Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage
Output
Transistor Current
Base Current
Diode Forward Current Power Dissipation Junction Temperature Operating Temperature Storage Temperature
VCC VCBO VCEO VEBO
IO IO (PEAK)
IB IB (PEAK)
IF PD Tj Topr Tstg
−10 −10 −10 −6 −2 −4 (Note 1) −0.4 −0.8 (Note 1) −2 (Note 2) 590 150 −40~85 −55~150
Note 1: T = 10 ms Max. and maximum duty is less than 30% Note 2: T = 10 ms single pulse
UNIT V V V V
A / ch
A
A mW °C °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Current Gain
Saturation Voltage Transition Frequency Leakage Current Diode Forward Voltage Base−Emitter Resistance Base−Emitter Forward Voltage
SYMBOL
hFE (1) hFE (2)
VCE (sat)
fT IOL
VF
RBE VBE
TEST CIR− CUIT
TEST CONDITION
― VCE = 1 V, IC = 0.5 A
― VCE = 1 V, IC = 2.0 A
― IC = 1 A, IB = 25 mA IC = 2 A, IB...