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TD62786AFN Dataheets PDF



Part Number TD62786AFN
Manufacturers Toshiba
Logo Toshiba
Description 8CH HIGH-VOLTAGE SOURCE-CURRENT DRIVER
Datasheet TD62786AFN DatasheetTD62786AFN Datasheet (PDF)

TD62786AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62786AFN 8CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62786AFN is eight Channel Non−Inverting Source current Transistor Array. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer and lamp drivers. FEATURES l Package Type : SSOP18 pin (0.65 mm pitch) l High Output Voltage : VCE (SUS) = 50 V (Min) l Output Current (Single Output) : IOUT = −500 mA / ch (Max) l Low .

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TD62786AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62786AFN 8CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER The TD62786AFN is eight Channel Non−Inverting Source current Transistor Array. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer and lamp drivers. FEATURES l Package Type : SSOP18 pin (0.65 mm pitch) l High Output Voltage : VCE (SUS) = 50 V (Min) l Output Current (Single Output) : IOUT = −500 mA / ch (Max) l Low Level Active Input l Output Clamp Diodes l Input Compatible with TTL, 5 V CMOS l Single Supply Voltage Weight: 0.09 g (Typ.) PIN CONNECTION (TOP VIEW) SCHEMATICS (EACH DRIVER) MAXIMUM RATING (Ta = 25°C, VCC = 0 V) Note: The input and output parasitic diodes cannot be used as clamp diodes. CHARACTERISTIC SYMBOL RATING Supply Voltage Output Sustaining Voltage Output Current Input Voltage Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation Operating Temperature Storage Temperature VCC−VGND VCE (SUS) IOUT VIN VR IF PD (Note) Topr Tstg 50 −50 −500 −30 ~ 0.5 50 500 0.96 −40 ~ 85 −55 ~ 150 Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%) UNIT V V mA / ch V V mA W °C °C 1 2001-07-05 TD62786AFN RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C, VCC = 0 V) CHARACTERISTIC SYMBOL CONDITION Supply Voltage Output Sustaining Voltage Output Current VCC−VGND VCE (SUS) DC 1 Circuit IOUT (Note) Tpw = 25 ms, Tj = 120°C, Ta = 85°C, 8 Circuits Duty = 10% Duty = 50% Input Voltage Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation VIN VR IF PD (Note) Note: On Class Epoxy PCB (50 × 50 × 1.6 mm Cu 40%) MIN TYP. MAX UNIT ― ― 50 V ― ― −50 V ― ― −350 0 ― −180 mA / ch 0 ― −38 −30 ― 0 V ― ― 50 V ― ― 350 mA ― ― 0.4 W ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = 0 V) CHARACTERISTIC Output Leakage Current SYMBOL ICEX TEST CIR− CUIT TEST CONDITION 1 VOUT = VGND = −50 V Ta = 85°C Output Saturation Voltage DC Current transfer Ratio Input Voltage “H” Level “L” Level VCE (sat) hFE VIN VIN = VIL MAX. 2 IOUT = −100 mA VIN = VIL MAX. IOUT = −350 mA 2 VCC = 0 V, VCE = 3 V IOUT = −350 mA 4 Input Current Clamp Diode Reverse Current Clamp Diode Forward Voltage Turn−On Delay Turn−Off Delay IIN (ON) IR VF tON tOFF 3 VCC = 5.5 V, VIN = 0.4 V ― VR = VR MAX., Ta = 85°C ― 5 VOUT = −50 V, RL = 125 Ω CL = 15 pF MIN TYP. MAX UNIT ― ― −100 µA ― ― −1.8 V ― ― −2.0 1000 −1.2 −30 ― ― ― ― ― ― ― ― ― ― ― 0.2 1.0 ― 0 −2.8 −0.4 100 2.0 ― ― V mA µA V µs 2 2001-07-05 TEST CIRCUIT 1. ICEX 2. VCE (sat), hFE TD62786AFN 3. IIN (ON) 4. VIN (ON), VIN (OFF) 5. tON, tOFF Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 10 ns, tf ≤ 5 ns Note 2: CL includes probe and jig capacitance PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. 3 2001-07-05 TD62786AFN 4 2001-07-05 PACKAGE DIMENSIONS SSOP18−P−225−0.65 TD62786AFN Unit: mm Weight: 0.09 g (Typ.) 5 2001-07-05 TD62786AFN RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instrumen.


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