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TD62783F Dataheets PDF



Part Number TD62783F
Manufacturers Toshiba
Logo Toshiba
Description 8CH HIGH-VOLTAGE SOURCE DRIVER
Datasheet TD62783F DatasheetTD62783F Datasheet (PDF)

TD62783,784AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62783AP,TD62783F,TD62783AF TD62784AP,TD62784F,TD62784AF 8CH HIGH−VOLTAGE SOURCE DRIVER The TD62783AP / F / AF Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers. FEATURES l High output voltage Type−AP, AF : VCC = 50 V MIN. Type−F : VCC = 35 V MIN. l Output current (sin.

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TD62783,784AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62783AP,TD62783F,TD62783AF TD62784AP,TD62784F,TD62784AF 8CH HIGH−VOLTAGE SOURCE DRIVER The TD62783AP / F / AF Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers. FEATURES l High output voltage Type−AP, AF : VCC = 50 V MIN. Type−F : VCC = 35 V MIN. l Output current (single output) IOUT = −500 mA MIN. l Output clamp diodes l Single supply voltage l Input compatible with various types of logic l Package Type−AP : DIP−18 pin l Package Type−F, AF : SOP−18 pin TYPE TD62783AP / F / AF TD62784AP / F / AF DESIGNATION TTL, 5 V CMOS 6~15 V PMOS, CMOS PIN CONNECTION (TOP VIEW) Weight DIP18−P−300−2.54D : 1.47 g (Typ.) SOP18−P−375−1.27 : 0.41 g (Typ.) SCHEMATICS (EACH DRIVER) Note: The input and output parasitic diodes cannot be used as clamp diodes. 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) TD62783,784AP/F/AF CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Output Current AP, AF F Input Voltage Clamp Diode Reverse Voltage AP, AF F Clamp Diode Forward Current Power Dissipation AP F, AF Operating Temperature Storage Temperature VCC IOUT VIN (Note 1) VIN (Note 2) VR IF PD (Note 3) Topr Tstg 50 35 −500 15 30 50 35 500 1.47 0.96 −40~85 −55~150 V mA / ch V V mA W °C °C Note 1: Only TD62783AP / F / AF Note 2: Only TD62784AP / F / AF Note 3: Delated above 25°C in the proportion of 11.7 W / °C (AP Type), 7.7 W / °C (F, AF Type) RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C) CHARACTERISTIC Supply Voltage AP, AF F Output Current AF, F Input Voltage TD62783AP / F / AF TD62784AP / F / AF Input Voltage Output On Output Off TD62783AP / F / AF TD62784AP / F / AF TD62783AP / F / AF TD62784AP / F / AF Clamp Diode Reverse Voltage AP F, AF Clamp Diode Forward Current Power Dissipation AP F, AF SYMBOL VCC IOUT VIN VIN (ON) VIN (OFF) VR IF PD TEST CONDITION MIN ― ― Duty = 10% 8Circuits Ta = 85°C Duty = 50% 8Circuits Tj = 120°C Tpw = 25ms Duty = 10% 8Circuits Duty = 50% 8Circuits ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 2.0 4.5 0 0 ― ― ― ― ― TYP. ― ― ― ― ― ― ― ― 5.0 12.0 ― ― ― ― ― ― ― MAX UNIT 50 35 −260 −59 −180 −38 12 24 15 30 0.8 2.0 50 35 400 0.52 0.35 V mA / ch V V V mA W 2 2001-07-05 TD62783,784AP/F/AF ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Leakage Current Output Saturation Voltage Input Current Input Voltage TD62783AP / F / AF TD62784AP / F / AF TD62783AP / F / AF TD62784AP / F / AF TD62783AP / F / AF TD62784AP / F / AF SYMBOL ICEX VCE (sat) IIN (ON) VIN (ON) VIN (OFF) TEST CIR− CUIT TEST CONDITION 1 VCC = VCC MAX. VIN = 0.4 V Ta = 25°C VIN = VIN (ON), IOUT = −350 mA 2 VIN = VIN (ON), IOUT = −225 mA VIN = VIN (ON), IOUT = −100 mA VIN = 2.4 V 3 VIN = 3.85 V VIN = 5 V VIN = 12 V VCE = 2.0 V 4 IOUT = −350 mA IOUT = −500 µA Supply Current Clamp Diode Reverse Current AP, AF F Clamp Diode Forward Voltage Turn−On Delay Turn−Off Delay ICC (ON) IR VF tON tOFF 3 VIN = VIN (ON), VCC = 50 V 5 VR = 50 V VR = 35 V 6 IF = 350 mA 7 VCC = VCC MAX. RL = 125 Ω CL = 15 pF, RL = 88 Ω (F) MIN TYP. MAX UNIT ― ― 100 µA ― ― 2.0 ― ― 1.9 V ― ― 1.8 ― 36 52 ― 180 260 µA ― 92 130 ― 790 1130 ― ― 2.0 ― ― 4.5 V 0.8 ― ― 2.0 ― ― ― ― 2.5 mA / ch ― ― 50 µA ― ― 50 ― ― 2.0 V ― 0.15 ― ― 1.8 ― µs 3 2001-07-05 TEST CIRCUIT 1. ICEX 3. IIN (ON), ICC 5. IR 7. tON, tOFF 2. VCE (sat) TD62783,784AP/F/AF 4. VIN (ON), VIN (OFF) 6. VF Note 1: Pulse width 50 µs, duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. 4 2001-07-05 TD62783,784AP/F/AF 5 2001-07-05 TD62783,784AP/F/AF 6 2001-07-05 PACKAGE DIMENSIONS DIP18−P−300−2.54D TD62783,784AP/F/AF Unit: mm Weight: 1.47 g (Typ.) 7 2001-07-05 PACKAGE DIMENSIONS SOP18−P−375−1.27 TD62783,784AP/F/AF Unit: mm Weight: 0.41 g (Typ.) 8 2001-07-05 TD62783,784AP/F/AF RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure.


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