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TD62703P Dataheets PDF



Part Number TD62703P
Manufacturers Toshiba
Logo Toshiba
Description 6CH HIGH VOLTAGE SOURCE DRIVER
Datasheet TD62703P DatasheetTD62703P Datasheet (PDF)

TD62703P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62703P,TD62703F 6CH HIGH VOLTAGE SOURCE DRIVER The TD62703P, TD62703F is comprised of six source current Transistor Array. These drivers are specifically designed for fluorescent display applications. For proper operation, the substrate (SUB) must be connected to the most negative voltage. FEATURES l High output voltage : VCC, VOUT = 60 V (Min) l Output current (single output) : IOUT = −50 mA (Max) l Input resistor .

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TD62703P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62703P,TD62703F 6CH HIGH VOLTAGE SOURCE DRIVER The TD62703P, TD62703F is comprised of six source current Transistor Array. These drivers are specifically designed for fluorescent display applications. For proper operation, the substrate (SUB) must be connected to the most negative voltage. FEATURES l High output voltage : VCC, VOUT = 60 V (Min) l Output current (single output) : IOUT = −50 mA (Max) l Input resistor : RIN = 2.7 kΩ l Package type−P : DIP−14 pin l Package type−F : SOP−14 pin PIN CONNECTION (TOP VIEW) SCHEMATICS (EACH DRIVER) Weight DIP14−P−300−2.54 : 1.11 g (Typ.) SOP14−P−225−1.27 : 0.16 g (Typ.) Note: The input and output parasitic diodes cannot be used as clamp diodes. 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) TD62703P/F CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Output Sustaining Voltage Input Voltage Output Current Input Current Power Dissipation Operating Temperature Storage Temperature P F VSUB VOUT VIN IOUT IIN PD (Note 2) Topr Tstg VCC − 60 VCC − 60 −30~0.5 −50 10 1.0 0.625 (Note 1) −40~85 −55~150 V V V mA / ch mA W °C °C Note 1: On Glass Epoxy PCB (50 × 50 ×1.6 mm Cu 50%) Note 2: Delated above 25°C in the proportion 8.0mW / °C (P Type), 5.0mW / °C (F Type). RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C) CHARACTERISTIC SYMBOL CONDITION Supply Voltage Output Sustaining Voltage Output Current Input Voltage Power Dissipation P F VSUB VOUT IOUT VIN PD VCC = 0 V On PCB ― Note: On Glass Epoxy PCB (50 × 50 ×1.6 mm Cu 30%) MIN TYP. MAX UNIT VOUT ― −55 V 0 ― VSUB V 0 ― −40 mA / ch 0 ― −7.0 V (Note) ― ― ― 0.36 W ― 0.325 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Leakage Current Collector−Emitter Saturation Voltage DC Current Transfer Ratio Input Current Output On Output Off Input Voltage Output On Output Off Turn−On Delay P F Turn−Off Delay P F SYMBOL ICEX VCE (sat) hFE VIN (ON) VIN (OFF) VIN (ON) VIN (OFF) TEST CIR− CUIT TEST CONDITION 1 VCC = 0 V, VIN = 0 V VOUT = −55 V 2 IIN = −1 mA, IOUT = −40 mA 2 VCE = −5.0 V, IOUT = −40 mA 3 VCC = 0 V, VIN = −5.1 V ― 4 VCC = 0 V tON VCC = 0 V, 5 VSUB = VOUT = −55 V tON RL = 1.4 kΩ, CL= 15 pF MIN TYP. MAX UNIT ― ― 100 ― ― −3.0 ― ― ― ― ― ― −100 ― ― −1.7 ― ― ― 1 0.5 2 1 −2.5 ― −2.4 10 ― −0.44 ― ― ― ― µA V ― mA µA V µs µs 2 2001-07-05 TEST CIRCUIT 1. ICEX 3. IIN (ON), IIN (OFF) 5. tON, tOFF 2. VCE (sat), hFE TD62703P/F 4. VIN (ON), IIN (OFF) Note 1: Pulse width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 10 ns, tf ≤ 5 ns Note 2: CL includes probe and jig capacitance. PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GN.


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