TD62593,594,597,598AFN
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62593AFN,TD62594AFN,TD62597AFN,TD...
TD62593,594,597,598AFN
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62593AFN,TD62594AFN,TD62597AFN,TD62598AFN
8CH SINGLE DRIVER : COMMON EMITTER
The TD62593, 4, 7, 8AFN are comprised of eight
NPN Transistor Arrays. Applications include relay, hammer, lamp and display (LED) drivers.
FEATURES
l Package Type : SSOP18pin (0.65 mm pitch)
l High Sustaining Voltage Output : 50 V (MIN)
l Low Saturation Voltage
: VCE (sat) = 0.8 V
@IOUT = 150 mA·Inputs Compatible with Various type Logic.
TD62593AFN, TD62597AFN : RIN = 2.7 kΩ TTL, 5 V CMOS
TD62594AFN, TD62598AFN : RIN = 10.5 kΩ 6~15 V PMOS,
CMOS
PIN CONNECTION (TOP VIEW)
TD62593AFN, TD62594AFN
Weight: 0.09 g (Typ.) TD62597AFN, TD62598AFN
SCHEMATICS (EACH DRIVER)
TD62593AFN, TD62594AFN
TD62597AFN, TD62598AFN
Note: The input and output parasitic diodes cannot be used as clamp diodes.
1 2001-07-04
MAXIMUM RATINGS (Ta = 25°C)
TD62593,594,597,598AFN
CHARACTERISTIC
SYMBOL
RATING
Collector−Emitter Voltage Collector−Base Voltage Clamp Diode Reverse Voltage Collector Current Input Voltage Power Dissipation Operating Temperature Storage Temperature
VCEO VCBO VR (Note 1)
IC VIN PD (Note 2) Topr Tstg
50 50 50 200 −0.5~30 0.96 −40~85 −55~150
Note 1: Except TD62593AFN, TD62594AFN Note 2: On Glass Epoxy PCB (50 × 50 ×1.6 mm Cu 40%)
UNIT
V V V mA / ch V W °C °C
RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)
CHARACTERISTIC
SYMBOL
Collector−Emitter Voltage Collector−Base Voltage
VCEO VCBO
Collector Cu...