Document
TD62501~507P/F
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62501P,TD62501F,TD62502P,TD62502F,TD62503P,TD62503F,TD62504P TD62504F,TD62505P,TD62505F,TD62506P,TD62506F,TD62507P,TD62507F
7CH SINGLE DRIVER
TD62501, 502, 503, 504P / F : COMMON EMITTER
TD62505, 506P / F
: COMMON COLLECTOR
TD62507P / F
: ISOLATED
The TD62501P / F Series are comprised of seven or five NPN Transistor Arrays. For proper operation, the substrate (SUB) must be connected to the most negative voltage. Applications include relay, hammer, Lamp and display (LED) drivers.
FEATURES
l Output Current (Single Output) 200 mA MAX. l High Sustaining Voltage Output 35 V MIN. l Inputs Compatible with Various Types of Logic. l TD62501P / F, TD62505P / F and TD62507P / F: Using
external resistor···General Purpose
l TD62502P / F : RIN = 10.5 kΩ + 7V Zener Diode···14~25 V P−MOS
l TD62503P / F, TD62506P / F : RIN = 2.7 kΩ···TTL, 5 V C−MOS
l TD62504P / F, : RIN = 10.5 kΩ···6~15 V P−MOS, C−MOS l Package Type−P : DIP−16 pin l Package Type−F : SOP−16 pin
Weight DIP16−P−300−2.54A : 1.11 g (Typ.) SOP16−P−225−1.27 : 0.16 g (Typ.)
1 2001-07-04
PIN CONNECTION (Top view)
TD62501P / F, TD62502P / F TD62503P / F, TD62504P / F
TD62501~507P/F
TD62505P / F, TD62506P / F
TD62507P / F
SCHEMATICS (Each driver)
TD62501P / F
TD62502P / F
TD62503P / F TD62504P / F
TD62503P / F R1 = 2.7 kΩ, TD62504P / F R1 = 10.5 kΩ *: Parasitic Diodes
2
2001-07-04
SCHEMATICS (Each driver)
TD62505P / F
TD62501~507P/F
TD62506P / F
TD62507P / F
*: Parasitic Diodes Note: The input and output parasitic diodes cannot be used as clamp diodes.
MAXIMUM RATINGS (Ta = 25°C Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage Collector−Base Voltage Collector Current
Input Voltage
Input Current Isolation Voltage
Power Dissipation
Operating Temperature Storage Temperature
P F
VCEO VCBO
IC VIN (Note 1) VIN (Note 2) IIN (Note 3) VSUB
PD
Topr Tstg
35 50 200 −0.5~45
−0.5~30
V V mA / ch
V
25
35 1.0 0.625 (Note 4) −40~85 −55~150
mA V
W
°C °C
Note 1: TD62506P / F Note 2: TD62502P / F, TD62503P / F, TD62504P / F Note 3: TD62501P / F, TD62505P / F, TD62507P / F Note 4: On Glass Epoxy PCB (30 × 30 × 1.6 mm, Cu 50%)
3
2001-07-04
RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)
TD62501~507P/F
CHARACTERISTIC
SYMBOL
Collector−Emitter Voltage
Collector−Base Voltage
Collector Current
TD62506P / F
Input Voltage
TD62502P / F TD62503P / F
TD62504P / F
TD62501P / F
Input Current
TD62505P / F
TD62507P / F
Power Dissipation
P F
VCEO VCBO
IC
VIN
IIN
PD On PCB
Note: 30 × 30 × 1.6 mm, Cu 50%
CONDITION
MIN TYP. MAX UNIT
0 ― 35 V 0 ― 50 V 0 ― 150 mA / ch 0 ― 35
V 0 ― 25
0 ― 10 mA
(Note)
― ―
― 0.360 ― 0.325
W
ELECTRICAL CHARACTERISTICS (Ta = 25°C Unless otherwise noted)
CHARACTERISTIC Output Leakage Current
Collector−Emitter Saturation Voltage
DCCurrent Transfer Ratio
Input Voltage
Turn−On Delay Turn−Off Delay
(Note 2) (Note 3) TD62502P / F TD62503P / F TD6250.
Similar Datasheet