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TD62503F Dataheets PDF



Part Number TD62503F
Manufacturers Toshiba
Logo Toshiba
Description 7 SINGLE DRIVER
Datasheet TD62503F DatasheetTD62503F Datasheet (PDF)

TD62501~507P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62501P,TD62501F,TD62502P,TD62502F,TD62503P,TD62503F,TD62504P TD62504F,TD62505P,TD62505F,TD62506P,TD62506F,TD62507P,TD62507F 7CH SINGLE DRIVER TD62501, 502, 503, 504P / F : COMMON EMITTER TD62505, 506P / F : COMMON COLLECTOR TD62507P / F : ISOLATED The TD62501P / F Series are comprised of seven or five NPN Transistor Arrays. For proper operation, the substrate (SUB) must be connected to the most negative voltage..

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TD62501~507P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62501P,TD62501F,TD62502P,TD62502F,TD62503P,TD62503F,TD62504P TD62504F,TD62505P,TD62505F,TD62506P,TD62506F,TD62507P,TD62507F 7CH SINGLE DRIVER TD62501, 502, 503, 504P / F : COMMON EMITTER TD62505, 506P / F : COMMON COLLECTOR TD62507P / F : ISOLATED The TD62501P / F Series are comprised of seven or five NPN Transistor Arrays. For proper operation, the substrate (SUB) must be connected to the most negative voltage. Applications include relay, hammer, Lamp and display (LED) drivers. FEATURES l Output Current (Single Output) 200 mA MAX. l High Sustaining Voltage Output 35 V MIN. l Inputs Compatible with Various Types of Logic. l TD62501P / F, TD62505P / F and TD62507P / F: Using external resistor···General Purpose l TD62502P / F : RIN = 10.5 kΩ + 7V Zener Diode···14~25 V P−MOS l TD62503P / F, TD62506P / F : RIN = 2.7 kΩ···TTL, 5 V C−MOS l TD62504P / F, : RIN = 10.5 kΩ···6~15 V P−MOS, C−MOS l Package Type−P : DIP−16 pin l Package Type−F : SOP−16 pin Weight DIP16−P−300−2.54A : 1.11 g (Typ.) SOP16−P−225−1.27 : 0.16 g (Typ.) 1 2001-07-04 PIN CONNECTION (Top view) TD62501P / F, TD62502P / F TD62503P / F, TD62504P / F TD62501~507P/F TD62505P / F, TD62506P / F TD62507P / F SCHEMATICS (Each driver) TD62501P / F TD62502P / F TD62503P / F TD62504P / F TD62503P / F R1 = 2.7 kΩ, TD62504P / F R1 = 10.5 kΩ *: Parasitic Diodes 2 2001-07-04 SCHEMATICS (Each driver) TD62505P / F TD62501~507P/F TD62506P / F TD62507P / F *: Parasitic Diodes Note: The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta = 25°C Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Collector−Base Voltage Collector Current Input Voltage Input Current Isolation Voltage Power Dissipation Operating Temperature Storage Temperature P F VCEO VCBO IC VIN (Note 1) VIN (Note 2) IIN (Note 3) VSUB PD Topr Tstg 35 50 200 −0.5~45 −0.5~30 V V mA / ch V 25 35 1.0 0.625 (Note 4) −40~85 −55~150 mA V W °C °C Note 1: TD62506P / F Note 2: TD62502P / F, TD62503P / F, TD62504P / F Note 3: TD62501P / F, TD62505P / F, TD62507P / F Note 4: On Glass Epoxy PCB (30 × 30 × 1.6 mm, Cu 50%) 3 2001-07-04 RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C) TD62501~507P/F CHARACTERISTIC SYMBOL Collector−Emitter Voltage Collector−Base Voltage Collector Current TD62506P / F Input Voltage TD62502P / F TD62503P / F TD62504P / F TD62501P / F Input Current TD62505P / F TD62507P / F Power Dissipation P F VCEO VCBO IC VIN IIN PD On PCB Note: 30 × 30 × 1.6 mm, Cu 50% CONDITION MIN TYP. MAX UNIT 0 ― 35 V 0 ― 50 V 0 ― 150 mA / ch 0 ― 35 V 0 ― 25 0 ― 10 mA (Note) ― ― ― 0.360 ― 0.325 W ELECTRICAL CHARACTERISTICS (Ta = 25°C Unless otherwise noted) CHARACTERISTIC Output Leakage Current Collector−Emitter Saturation Voltage DCCurrent Transfer Ratio Input Voltage Turn−On Delay Turn−Off Delay (Note 2) (Note 3) TD62502P / F TD62503P / F TD62504P / F SYMBOL ICEX VCE (sat) hFE VIN (ON) tON tOFF TEST CIR− CUIT TEST CONDITION 1 VCE = 25 V, VIN = 0 IIN = 1 mA, IC = 10 mA 2 IIN = 3 mA, IC = 150 mA (Note 1) 2 VCE = 10 V, IC = 10 mA 3 IIN = 1 mA IC = 10 mA 4 VOUT = 35 V, RL = 3.3 kΩ CL = 15 pF MIN ― ― ― 70 50 13 2.4 7.5 ― ― TYP. ― ― ― ― ― 17 3.4 11.5 50 200 MAX UNIT 10 µA 0.2 V 0.8 ― ― 23 4.2 V 15 ― ns ― Note 1: Except TD62502P / F Only Note 2: Only TD62501P / F, TD62505P / F, TD62506P / F, TD62507P / F Note 3: Only TD62502P / F, TD62503P / F, TD62504P / F 4 2001-07-04 TEST CIRCUIT 1. ICEX 2. hFE, VCE (sat) TD62501~507P/F 3. VIN (ON) 4. tON, tOFF Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: See below INPUT CONDITION TYPE NUMBER TD62501P / F TD62502P / F TD62503P / F TD62504P / F TD62505P / F TD62506P / F TD62507P / F RI 2.7 kΩ 0Ω 0Ω 0Ω 2.7 kΩ 0Ω 2.7 kΩ Note 3: CL includes probe and jig capacitance VIH 3V 15 V 3V 10 V 3V 3V 3V PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. 5 2001-07-04 TD62501~507P/F 6 2001-07-04 TD62501~507P/F 7 2001-07-04 PACKAGE DIMENSIONS DIP16−P−300−2.54A TD62501~507P/F Unit: mm Weight: 1.11 g (Typ.) 8 2001-07-04 PACKAGE DIMENSIONS SOP16−P−225−1.27 TD62501~507P/F Unit: mm Weight: 0.16 g (Typ.) 9 2001-07-04 TD62501~507P/F RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability .


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