Document
TD62386,387,388AP/AF
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62386AP,TD62386AF,TD62387AP TD62387AF,TD62388AP,TD62388AF
8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER
The TD62386AP, TD62386AF, TD62387AP, TD62387AF and TD62388AP, TD62388AF are non−inverting transistor arrays, which are comprised of eight NPN darlington output stages and PNP input stages. All units feature integral clamp diodes for switching inductive loads. These devices are Low Level input active drivers and are suitable for operations with TTL, 5 V CMOS and 5 V Microprocessor which have sink current output drivers. Applications include relay, hammer, lamp and LED driver.
FEATURES
l Output current (single output) 500 mA (Max) l High sustaining voltage 50 V (Min) l Output clamp diodes l Low level active input l Standard supply voltage l Inputs compatible with TTL and 5 V CMOS l Package type−AP: DIP−20 pin l Package type−AF: SOP−20 pin
TYPE
TD62386AP, TD62386AF TD62387AP, TD62387AF TD62388AP, TD62388AF
VIN (ON) −20 V~VCC − 2.8 V
0 V~VCC − 3.7 V
PIN CONNECTION (TOP VIEW)
Weight DIP20−P−300−2.54A : 2.25 g (Typ.) SOP20−P−300−1.27 : 0.25 g (Typ.)
1 2001-07-04
SCHEMATICS (EACH DRIVER)
TD62386AP,TD62386AF
TD62386,387,388AP/AF
TD62387AP, TD62387AF
TD62388AP,TD62388AF
Note: The output parasitic diode cannot be used as clamp diodes.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
Output Sustaining Voltage
Output Current
AP AF
Input Voltage
Input Current
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
AP AF
Operating Temperature
Storage Temperature
VCC
VCE (SUS)
IOUT VIN (Note 1) VIN (Note 2)
IIN VR IF
PD (Note 3)
Topr Tstg
−0.5~7.0 −0.5~50 −0.5~35
500 −22~VCC
+ 0.5 −0.5~7
−10 50 500 1.38 1.0 (Note 4) −40~85 −55~150
V V mA / ch
V
mA V mA W °C °C
Note 1: TD62386AP, TD62386AF only Note 2: TD62387AP, TD62387AF, TD62388AP, TD62388AF only Note 3: Delated above 25°C in the proportion of 11.7 mW / °C (AP−Type), 7.7 mW / °C (F, AF−Type). Note 4: On PCB (50 × 50 × 1.6 mm Cu 40% Glass Epoxy)
2 2001-07-04
TD62386,387,388AP/AF
RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)
CHARACTERISTIC
SYMBOL
CONDITION
Supply Voltage Output Sustaining Voltage
Output Current
TD62386AP TD62386AF
Input Voltage
TD62387AP TD62387AF TD62388AP TD62388AF
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
AP AF
VCC VCE (SUS)
IOUT
―
―
Tpw = 25 ms, Duty = 10% 8 Circuits
―
VIN ―
VR ― IF ―
― PD
Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)
MIN TYP. MAX UNIT
4.5 5.0 5.5
V
0 ― 50 V
0
―
270
mA / ch
−20 ― VCC
V 0 ― 5.5
(Note 1)
― ― ― ―
― 50
V
― 400 mA
― 0.52 W
― 0.4
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Output Leakage Current Output Saturation Voltage
Input Current
Input Voltage (Output on)
Output On
Output Off
TD62386AP TD62386AF
TD62387AP TD62387AF TD62388AP TD62388AF
Clamp Diode Reverse Current
Clamp Diode Forward Voltage
Supply Current
Turn−On Delay Turn−Off Delay
SYMBOL ICEX
VCE (sat)
IIN (ON) IIN (OFF)
TEST CIR− CUIT
TEST CONDITION
1
VCC = 5.5 V, IIN = 0 VOUT = 50 V, Ta = 85°C
VCC = 4.5 V, 2 VIN = VIN (ON) MAX.
IOUT = 350 mA
3 VCC = 5.5 V, VIN = 0.4 V VCC = 5.5 V, VIN = −20 V
4―
―
VIN (ON)
5
―
IR
VF
ICC (ON) ICC (OFF)
tON tOFF
6 VR = 50 V, Ta = 25°C VR = 50 V, Ta = 85°C
7 IF = 350 mA IF = 280 mA
8 VCC = 5.5 V, VIN = 0 VCC = 5.5 V, VIN = VCC
9
VCC = 5 V, VOUT = 50 V RL = 125Ω, CL = 15 pF
MIN TYP. MAX UNIT ― ― 100 µA
― 1.4 2.0 V
― −0.32 −0.45 mA
― ― −2.6
― ― −4.0 µA
―
―
VCC − 2.8
V
―
―
VCC − 3.7
― ― 50 µA
― ― 100 ― ― 2.0
V ― ― 1.8 ― 17 22 mA ― ― 100 µA ― 0.1 ―
µs ―3―
3 2001-07-04
TEST CIRCUIT 1. ICEX 3. IIN (ON) 5. VIN (ON)
7. VF 9. tON, tOFF
TD62386,387,388AP/AF
2. VCE (sat) 4. IIN (OFF) 6. IR
8. ICC
Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Note 2: CL includes probe and jig capacitance.
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding.
4 2001-07-04
TD62386,387,388AP/AF
5 2001-07-04
TD62386,387,388AP/AF
6 2001-07-04
PACKAGE DIMENSIONS
DIP20−P−300−2.54A
TD62386,387,388AP/AF
Unit: mm
Weight: 2.25 g (Typ.)
7 2001-07-04
PACKAGE DIMENSIONS
SOP20−P−300−1.27
TD62386,387,388AP/AF
Unit: mm
Weight: 0.25 g (Typ.)
8 2001-07-04
TD62386,387,388AP/AF
RESTRICTIONS ON PRODUCT USE
000707EBA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability .