TCET2600, TCET4600
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel)
Dual Channel
Quad Channel
i179012-2
CE
1
A
C
8 PIN
17196_1
C
16 PIN DVE
DESCRIPTION
The TCET2600, TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package.
FEATURES • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Low temperature coefficient of CTR • Rated impulse voltage (transient overvoltage)
VIOTM = 10 kV peak • Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV peak • Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak • Thickness though insulation ≥ 0.4 mm • Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175 • Compliant to RoHS Directive to 2002/95/EC and in
accordance WEEE 2002/96/EC
AGENCY APPROVALS • UL1577, file no. E52744 system code H, double protection • CSA 22.2 bulletin 5A, double protection • DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 (pending) • FIMKO
ORDERING INFORMATION
DIP
T
C
E
T
#
6
0
0
AGENCY CERTIFIED/ PACKAGE
UL, cUL, VDE, FIMKO DIP-8, dual channel DIP-16, quad channel
PART NUMBER
CTR (%) ± 5 mA 20 to 300 TCET2600 TCET4600
7.62 mm
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
INPUT
Reverse voltage
VR
6
Forward current
IF
± 60
Forward surge current
tp ≤ 10 μs
IFSM
± 1.5
Power dissipation
Pdiss
100
Junction temperature
Tj
125
UNIT
V mA A mW °C
Document Number: 83726 Rev. 1.6, 10-Dec-10
For technical questions, contact:
[email protected]
www.vishay.com 1
TCET2600, TCET4600
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current Collector peak current
IC
50
mA
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
t=1s
VISO
5300
VRMS
Isolation voltage
VIORM
890
VP
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Soldering temperature (2)
2 mm from case, t ≤ 10 s
Tsld
260
°C
Notes
(1) Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condi.