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TC7WT125FU Dataheets PDF



Part Number TC7WT125FU
Manufacturers Toshiba
Logo Toshiba
Description Dual BUS Buffer
Datasheet TC7WT125FU DatasheetTC7WT125FU Datasheet (PDF)

TC7WT125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WT125FU Dual Bus Buffer The TC7WT125FU is a high speed CMOS Dual Bus Buffers fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The input threshold levels are compatible with TTL output voltage. The require 3-state control input G to be set high to place the output Y into the high impedance. All inputs are equipped.

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TC7WT125FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WT125FU Dual Bus Buffer The TC7WT125FU is a high speed CMOS Dual Bus Buffers fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The input threshold levels are compatible with TTL output voltage. The require 3-state control input G to be set high to place the output Y into the high impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Weight: 0.02 g (typ.) Features • High speed • Low power dissipation • High noise immunity • Output drive capability • Symmetrical output impedance : tpd = 13 ns (typ.) at VCC = 5 V : ICC = 2 μA (max) at Ta = 25°C : VIL = 0.8 V (max), VIH = 2.0 V (min) : 15 LSTTL loads : |IOH| = IOL = 6 mA (min) Marking WT125 (SM8) Part No. Lot No. Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature range Lead temperature (10 s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating Unit −0.5 to 7 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±20 mA ±35 mA ±37.5 mA 300 mW −65 to 150 °C 260 °C Pin Configuration (top view) VCC G2 Y1 A2 8 7 6 5 1 2 3 4 G1 A1 Y2 GND Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1996-09 1 2015-08-27 Logic Diagram (1) G1 EN (2) A1 (7) G2 (5) A2 (6) Y1 (3) Y2 Operating Ranges Characteristics Supply voltage Input voltage Output voltage Operating temperature range Input rise and fall time Symbol VCC VIN VOUT Topr tr, tf TC7WT125FU Truth Table Inputs G A H X L L L H Output Y Z L H X: Don’t care Z: High impedance Rating Unit 4.5 to 5.5 V 0 to VCC V 0 to VCC V −40 to 85 °C 0 to 500 ns Electrical Characteristics DC Electrical Characteristics Characteristics Symbol Test Condition VCC (V) Ta = 25°C Min Typ. Max Ta = −40 to 85°C Unit Min Max High level VIH Input voltage Low level VIL ― 4.5 to 5.5 2.0 ― ― 2.0 ― V ― 4.5 to 5.5 ― ― 0.8 ― 0.8 High level VOH VIN = VIH or VIL IOH = −20 μA IOH = −6 mA 4.5 4.5 4.4 4.5 4.18 4.31 ― ― 4.4 4.13 ― ― Output voltage V IOL = 20 μA 4.5 ― 0 0.1 ― 0.1 Low level VOL VIN = VIL IOL = 6 mA 4.5 ― 0.17 0.26 ― 0.33 3-state output off-state current IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 ― ― ±0.5 ― ±5.0 μA Input leakage current IIN VIN = VCC or GND 5.5 ― ― ±0.1 ― ±1.0 μA ICC VIN = VCC or GND 5.5 ― ― 2.0 ― 20.0 μA Quiescent supply current ICCT PER INPUT : VIN = 0.5V or 2.4V OTHER INPUT : VCC or GND 5.5 ― ― 2.0 ― 2.9 mA 2 2015-08-27 TC7WT125FU AC Electrical Characteristics (Input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Output enable time Output disable time Input capacitance Output capacitance Power dissipation capacitance Symbol Test Condition tTLH ― tTHL tpLH tpHL ― tpZL tpZH RL = 1 kΩ tpLZ tpHZ RL = 1 kΩ CIN ― COUT ― CL(pF) VCC (V) 4.5 50 5.5 4.5 50 5.5 4.5 150 5.5 4.5 50 5.5 4.5 150 5.5 4.5 50 5.5 ― ― ― ― CPD (Note) ― ― Ta = 25°C Min Typ. Max ― 7 12 ― 6 11 ― 15 25 ― 13 22 ― 21 33 ― 18 29 ― 17 30 ― 14 27 ― 23 38 ― 20 34 ― 16 30 ― 13 27 ― 5 10 ― 10 ― ― 32 ― Ta = −40 to 85°C Unit Min Max ― 15 ns ― 14 ― 31 ― 28 ns ― 41 ― 37 ― 38 ― 34 ns ― 48 ― 43 ― 38 ns ― 34 ― 10 pF ― ― pF ― ― pF Note: CPD is defined as the value of internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD • VCC • fIN + ICC/2 (per gate) 3 2015-08-27 Package Dimensions TC7WT125FU Weight: 0.02 g (typ.) 4 2015-08-27 TC7WT125FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, sof.


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