Document
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WH126FU
TC7WH126FU
1. Functional Description
• Dual Bus Buffer with 3-State Output
2. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1) (2) High speed operation: tpd = 3.8 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) High noise immunity: VNIH = VNIL = 28 % VCC (min) (5) 5.5 V tolerant inputs (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage range: VCC = 2.0 to 5.5 V (8) Low noise: VOLP = 0.8 V (max)
Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SM8
©2017-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2020-01
2020-02-05 Rev.5.0
4. Marking and Pin Assignment
TC7WH126FU
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
G
A
Y
L
X
Z
H
L
L
H
H
H
X: Don't care Z: High impedance
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to 7.0
DC output voltage
VOUT
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 1)
±20
DC output current
IOUT
±25
VCC/ground current
ICC
±50
Power dissipation
PD
300
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
©2017-2020 Toshiba Electronic Devices & Storage Corporation
2
2020-02-05 Rev.5.0
8. Operating Ranges (Note)
TC7WH126FU
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Supply voltage
VCC
Input voltage
VIN
2.0 to 5.5
V
0 to 5.5
Output voltage
VOUT
0 to VCC
Operating temperature
Topr
(Note 1)
(Note 2)
-40 to 125
-40 to 85
Input rise and fall time
dt/dv
VCC = 3.3 ± 0.3 V
0 to 100
ns/V
VCC = 5.0 ± 0.5 V
0 to 20
Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND.
Note 1: For devices with the ordering part number ending in J(CT. Note 2: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics High-level input voltage Low-level input voltage High-level output voltage
Low-level output voltage
3-state output OFF-state leakage current Input leakage current Quiescent supply current
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Unit
VIH
VIL
VOH VIN = VIH
2.0
1.5
V
3.0 to 5.5 VCC × 0.7
2.0
0.5
V
3.0 to 5.5
IOH = -50 µA
2.0
1.9
3.0
2.9
VCC × 0.3
2.0
V
3.0
4.5
4.4
4.5
IOH = -4 mA
3.0
IOH = -8 mA
4.5
VOL VIN = VIH or VIL
IOL = 50 µA
2.0
3.0
2.58
3.94
0.0
0.1
V
0.0
0.1
4.5
0.0
0.1
IOL = 4 mA
3.0
IOL = 8 mA
4.5
IOZ VIN = VIH or VIL VOUT = VCC or GND
5.5
IIN VIN = 5.5 V or GND
0 to 5.5
ICC VIN = VCC or GND
5.5
0.36
0.36
±0.25
µA
±0.1
µA
2.0
µA
©2017-2020 Toshiba Electronic Devices & Storage Corporation
3
2020-02-05 Rev.5.0
TC7WH126FU
9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics High-level input voltage Low-level input voltage High-level output voltage
Low-level output voltage
3-state output OFF-state leakage current Input leakage current Quiescent supply current
Symbol
Test Condition
VCC (V)
Min
Max
Unit
VIH
VIL
VOH VIN = VIH
2.0
1.5
V
3.0 to 5.5 VCC × 0.7
2.0
0.5
V
IOH = -50 µA
3.0 to 5.5 2.0 3.0
VCC × 0.3
1.9
V
2.9
4.5
4.4
VOL VIN = VIH or VIL
IOH = -4 mA
3.0
2.48
IOH = -8 mA
4.5
3.80
IOL = 50 µA
2.0
0.1
V
3.0
0.1
4.5
0.1
IOZ VIN = VIH or VIL VOUT = VCC or GND
IIN VIN = 5.5 V or GND
ICC VIN = VCC or GND
IOL = 4 mA
3.0
IOL = 8 mA
4.5
5.5
0 to 5.5
5.5
0.44
0.44
±2.5
µA
±1.0
µA
20.0
µA
9.3. DC Characteristics (Note) .