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TC7WH126FU Dataheets PDF



Part Number TC7WH126FU
Manufacturers Toshiba
Logo Toshiba
Description Dual BUS Buffer
Datasheet TC7WH126FU DatasheetTC7WH126FU Datasheet (PDF)

CMOS Digital Integrated Circuits Silicon Monolithic TC7WH126FU TC7WH126FU 1. Functional Description • Dual Bus Buffer with 3-State Output 2. Features (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High speed operation: tpd = 3.8 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) High noise immunity: VNIH = VNIL = 28 % VCC (min) (5) 5.5 V tolerant inputs (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage.

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CMOS Digital Integrated Circuits Silicon Monolithic TC7WH126FU TC7WH126FU 1. Functional Description • Dual Bus Buffer with 3-State Output 2. Features (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High speed operation: tpd = 3.8 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) High noise immunity: VNIH = VNIL = 28 % VCC (min) (5) 5.5 V tolerant inputs (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage range: VCC = 2.0 to 5.5 V (8) Low noise: VOLP = 0.8 V (max) Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85  for the other devices. 3. Packaging SM8 ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-01 2020-02-05 Rev.5.0 4. Marking and Pin Assignment TC7WH126FU Marking 5. IEC Logic Symbol Pin Assignment (Top view) 6. Truth Table G A Y L X Z H L L H H H X: Don't care Z: High impedance 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to 7.0 DC output voltage VOUT -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 1) ±20 DC output current IOUT ±25 VCC/ground current ICC ±50 Power dissipation PD 300 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VOUT < GND, VOUT > VCC ©2017-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-02-05 Rev.5.0 8. Operating Ranges (Note) TC7WH126FU Characteristics Symbol Note Test Condition Rating Unit Supply voltage VCC Input voltage VIN  2.0 to 5.5 V  0 to 5.5 Output voltage VOUT  0 to VCC Operating temperature Topr (Note 1)  (Note 2)  -40 to 125  -40 to 85 Input rise and fall time dt/dv VCC = 3.3 ± 0.3 V 0 to 100 ns/V VCC = 5.0 ± 0.5 V 0 to 20 Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: For devices with the ordering part number ending in J(CT. Note 2: For devices except those with the ordering part number ending in J(CT. 9. Electrical Characteristics 9.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Input leakage current Quiescent supply current Symbol Test Condition VCC (V) Min Typ. Max Unit VIH  VIL  VOH VIN = VIH 2.0 1.5   V 3.0 to 5.5 VCC × 0.7   2.0   0.5 V 3.0 to 5.5  IOH = -50 µA 2.0 1.9 3.0 2.9  VCC × 0.3 2.0  V 3.0  4.5 4.4 4.5  IOH = -4 mA 3.0 IOH = -8 mA 4.5 VOL VIN = VIH or VIL IOL = 50 µA 2.0 3.0 2.58   3.94    0.0 0.1 V  0.0 0.1 4.5  0.0 0.1 IOL = 4 mA 3.0  IOL = 8 mA 4.5  IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5  IIN VIN = 5.5 V or GND 0 to 5.5  ICC VIN = VCC or GND 5.5   0.36  0.36  ±0.25 µA  ±0.1 µA  2.0 µA ©2017-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-02-05 Rev.5.0 TC7WH126FU 9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Input leakage current Quiescent supply current Symbol Test Condition VCC (V) Min Max Unit VIH  VIL  VOH VIN = VIH 2.0 1.5  V 3.0 to 5.5 VCC × 0.7  2.0  0.5 V IOH = -50 µA 3.0 to 5.5 2.0 3.0  VCC × 0.3 1.9  V 2.9  4.5 4.4  VOL VIN = VIH or VIL IOH = -4 mA 3.0 2.48  IOH = -8 mA 4.5 3.80  IOL = 50 µA 2.0  0.1 V 3.0  0.1 4.5  0.1 IOZ VIN = VIH or VIL VOUT = VCC or GND IIN VIN = 5.5 V or GND ICC VIN = VCC or GND IOL = 4 mA 3.0  IOL = 8 mA 4.5  5.5  0 to 5.5  5.5  0.44 0.44 ±2.5 µA ±1.0 µA 20.0 µA 9.3. DC Characteristics (Note) .


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