2-Input NAND Gate
TC7SA00F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SA00F,TC7SA00FU
2-Input NAND Gate
Features
•...
Description
TC7SA00F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SA00F,TC7SA00FU
2-Input NAND Gate
Features
Low voltage operation : VCC = 1.8 to 3.6 V High speed operation : tpd = 2.8 ns (max) (VCC = 3.0 to 3.6 V)
: tpd = 3.7 ns (max) (VCC = 2.3 to 2.7 V) : tpd = 7.4 ns (max) (VCC = 1.8 V) High output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V) : IOH/IOL = ±18 mA (min) (VCC = 2.3 V) : IOH/IOL = ±6 mA (min) (VCC = 1.8 V) 3.6-V tolerant inputs. 3.6-V power down protection output. TC74VCX00FT equivalent.
Marking
Product name
TC7SA00F TC7SA00FU
(SMV)
V1
Absolute Maximum Ratings (Ta = 25°C)
Weight SSOP5-P-0.95 SSOP5-P-0.65A
(USV)
: 0.016 g (typ.) : 0.006 g (typ.)
Characteristics
Symbol
Rating
Pin Assignment (top view)
Unit
Supply voltage DC input voltage
DC output voltage
Input diode current Output diode current DC output current Power dissipation DC VCC/ground current Storage temperature range
VCC VIN
VOUT
IIK IOK IOUT PD ICC Tstg
−0.5 to 4.6
V
−0.5 to 4.6
V
−0.5 to 4.6 (Note 1) −0.5 to VCC+0.5 (Note 2)
−50
V mA
−50 (Note 3) mA
±50 mA
200 mW
±100
mA
−65 to 150
°C
IN B 1 IN A 2 GND 3
5 VCC 4 OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum r...
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