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TC7S00FU

Toshiba

2-Input NAND Gate

TC7S00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S00F, TC7S00FU 2-Input NAND Gate Features • H...


Toshiba

TC7S00FU

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Description
TC7S00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S00F, TC7S00FU 2-Input NAND Gate Features High Speed : tpd = 7ns (typ.) at VCC = 5 V Low power dissipation : ICC = 1 μA (Max) at Ta = 25°C High noise immunity : VNIH = VNIL = 28% VCC (min) Output drive capability : 5 LSTTL Loads Symmetrical Output Impedance : |IOH| = IOL= 2mA (min) Balanced propagation delays : tpLH ≒ tpHL Wide operating voltage range : VCC = 2 to 6 V Marking E1 Product name TC7S00F TC7S00FU (SMV) (USV) Absolute Maximum Ratings (Ta = 25°C) Weight SSOP5-P-0.95 SSOP5-P-0.65A : 0.016 g (Typ.) : 0.006 g (Typ.) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10 s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating −0.5 to 7.0 −0.5 to VCC + 0.5 −0.5 to VCC + 0.5 ±20 ±20 ±12.5 ±25 200 −65 to 150 260 Unit Pin Assignment (top view) V V V IN B 1 mA 5 VCC mA IN A 2 mA mA GND 3 4 OUT Y mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate relia...




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