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Am29F400AB

AMD

4 Megabit CMOS 5.0 Volt-only Sector Erase Flash Memory

PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash M...


AMD

Am29F400AB

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Description
PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC-standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance — 60 ns maximum access time s Sector erase architecture — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes — Any combination of sectors can be erased. Also supports full chip erase. s Sector protection — Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment. s Embedded Erase™ Algorithms — Automatically preprograms and erases the chip or any sector s Embedded Program™ Algorithms — Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume — Supports reading data from a sector not being erased s Low power consumption — 20 mA typical active read current for Byte Mode — 28 mA typical active read current for Word Mode — 30 mA typical program/erase current s Enhanced power management for standby...




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