DatasheetsPDF.com

AM29F200B Dataheets PDF



Part Number AM29F200B
Manufacturers AMD
Logo AMD
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Datasheet AM29F200B DatasheetAM29F200B Datasheet (PDF)

DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ High performance — Access times as fast as 45 ns ■ Low power consumption — 20 mA typical active read current (byte mode) — 28 mA typical active read current for (word mode) — 30 mA typical pro.

  AM29F200B   AM29F200B


Document
DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ High performance — Access times as fast as 45 ns ■ Low power consumption — 20 mA typical active read current (byte mode) — 28 mA typical active read current for (word mode) — 30 mA typical program/erase current — 1 µA typical standby current ■ Sector erase architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write/erase cycles guaranteed ■ 20-year data retention at 125° C — Reliable operation for the life of the system ■ Package options — 44-pin SO — 48-pin TSOP — Known Good Die (KGD) (see publication number 21257) ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection ■ Data# Polling and Toggle Bit — Detects program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detection of program or erase cycle completion ■ Erase Suspend/Erase Resume — Supports reading data from a sector not being erased ■ Hardware RESET# pin — Resets internal state machine to the reading array data This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21526 Rev: D Amendment: 7 Issue Date: November 16, 2009 DATA SHEET GENERAL DESCRIPTION The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–DQ15. The Am29F200B is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21257. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and benefits of the Am29F200A, which was manufactured using 0.5 µm process technology. The standard device offers access times of 45, 50, 55 and 70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6/DQ2 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the da.


AM29F200A AM29F200B Am29F400AB


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)