74HCT2G126

INTEGRATED CIRCUITS DATA SHEET 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Product specification 2003 Mar 03 Philips Semiconductors Product specification Dual buffer/line driver; 3-state FEATURES Wide operating voltage from 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 8 pins package Output capability: bus driver ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = rf ≤ 6.0 ns. 74HC2G126; 74HCT2G126 DESCRIPTION The 74HC2G/HCT2G126 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT126. TYPICAL SYMBOL tPHL/tPLH CI CO CPD PARAMETER propagation delay nA to nY input capacitance output capacitance power dissipation capacitance output enabled; notes 1 and 2 per buffer output disabled; notes 1 and 2 CONDITIONS HC2G CL = 15 pF; VCC = 5 V 10 1 1.5 11 1 1 1.5 11 1 HCT2G 12 ns pF pF pF pF UNIT Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output freque...