DP100S

Semiconductor DP100S PNP Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100S Switching Application Ordering Information Type NO. DP100S Marking P03 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 2 0.15±0.05 0~0.1 0.4±0.05 0.9±0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-2118-000 1 DP100S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -1 200 150 -55~150 Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob Test Condition IC=-50µA, I E =0 IC=-1mA, IB=0 IE =-50µA, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100mA VCE=-1V, IC =-1A IC=-400mA, IB =-20mA IC=-400mA, IB =-20mA VCE=-5V, IC =-50mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 200 70 - Typ. 330 9 Max. -0.1...