ZXT12N20DX

ZXT12N20DX SuperSOT4™ DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSOP8 FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=3.5A Continuous Collector Current MSOP8 package C1 C2 B1 B2 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control 7 B1 E1 E2 ORDERING INFORMATION DEVICE ZXT12N20DXTA ZXT12N20DXTC DEVICE MARKING T12N20DX REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed 1 E1 C1 C1 C2 C2 QUANTITY PER REEL 1000 units E2 B2 3 2 Top View 4000 units ISSUE 1 - MARCH 2000 1 4 5 6 8 ZXT12N20DX ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 50 20 7.5 15 3.5 500 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C W mW/°C °C P...