ZXMN6A25DN8

ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V: RDS(ON)= 0.055 DESCRIPTION ; ID= 4.7A This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low gate drive Low profile SOIC package SO8 APPLICATIONS DC - DC Converters Power Management Functions Motor control ORDERING INFORMATION DEVICE ZXMN6A25DN8TA ZXMN6A25DN8TC REEL 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMN 6A25D Top view PROVISIONAL ISSUE B - JUNE 2003 1 SEMICONDUCTORS ZXMN6A25DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25°C @V GS =10V; T A =70°C @V GS =10V; T A =25°C Pulsed Drain Current (c) (b) (b) (d) (b) (d) (a) (d) SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j :T stg (c) LIMIT 60 Ϯ20 4.7 3.7 3.6 22 3.5 22 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25°C Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor Power Dissipation at T A =25°C (b) (d) Linear Derating Factor (a) (d) Operating and Storage Temperature Range THERMAL RESISTANC...