ZXMC3A18DN8

ADVANCE INFORMATION ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Motor Drive LCD backlighting Q1 = N-channel Q2 = P-channel ORDERING INFORMATION DEVICE ZXMC3A18DN8TA ZXMC3A18DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING ZXMC 3A18 Top View DRAFT ISSUE C - JUNE 2003 1 SEMICONDUCTORS ZXMC3A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed Drain Current Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) (d) Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor Power Dissipation at T A =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range T j , T stg PD (c) ADVANCE INFORMATION SYMBOL V DSS V GS ID LIMIT 30 ±20 7.6 6.1 5.8 37 3.6 37 1.25 10 PD...