ZXM64P03X

ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075⍀; ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package MSOP8 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control S D D D D ORDERING INFORMATION DEVICE ZXM64P03XTA ZXM64P03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units S G 3 DEVICE MARKING ZXM4P03 PROVISIONAL ISSUE A - JULY 1999 145 4 Top View 5 6 7 S 2 1 8 ZXM64P03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=4.5V; T A=25°C)(b) (V GS=4.5V; T A=70°C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25°C (a) Linear Derating Factor Power Dissipation at T A=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -30 ± 20 -3.8 -3.0 -19 -2.3 -19 1.1 8.8 1.8 14.4 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient ...