ZXM64P035L3

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package APPLICATIONS · 100W Class D Audio Output Stage · Motor Control ORDERING INFORMATION DEVICE ZXM64P035L3 MULTIPLES 1000 DEVICE MARKING · ZXM6 4P035 Front View PROVISIONAL ISSUE A - JANUARY 2002 1 ZXM64P035L3 ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; T C =25°C)(a) (V GS = -10V; T A =25°C)(b) Pulsed Drain Current (b) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(b) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j :T stg LIMIT -35 Ϯ 20 -12 -3.3 -19 -2.3 -19 20 160 1.5 12 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Case (a) Junction to Ambient (b) SYMBOL R θ JC R θ JA VALUE 6.25 83.3 UNIT °C/W °C/W PROVISIONAL ISSUE A - JANUARY 2002 2 ZXM64P035L3 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). ...