ZXM62P02E6

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20⍀; ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXM62P02E6TA ZXM62P02E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL Top View 3000 units 10000 units DEVICE MARKING 2P02 PROVISIONAL ISSUE A - JULY 1999 105 ZXM62P02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=-4.5V; T A=25°C)(b) (V GS=-4.5V; T A=70°C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25°C (a) Linear Derating Factor Power Dissipation at T A=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -20 ± 12 -2.3 -1.7 -13 -1.9 -13 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θJA R θJA VALUE 113 73 UNIT °C/W °...