P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8Ω typic...
Description
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8Ω typical at VGS=-3.5V * Low threshold and Fast switching APPLICATIONS * Electronic hook switches * Telecoms and Battery powered equipment COMPLEMENTARY TYPE PARTMARKING DETAIL ZVN4424G ZVP4424
ZVP4424G
D
S D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -240 -480 -1.0
± 40
UNIT V mA A V W °C
2.5 -55 to +150
3 - 438
ZVP4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 125 100 18 5 8 8 26 20 200 25 15 15 15 40 30 -0.75 -1.0 7.1 8.8 9 11 -240 -0.7 -1.4 -2.0 100 -10 -100 TYP MAX. UNIT V V nA
µA µA
CONDITIONS. ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 40V, VDS=0V VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125°C VDS=-10V, VGS=-10V VGS=-10V, ID=-200mA VGS=-3.5V, ID=...
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