P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEME...
Description
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEMENTARY TYPE PARTMARKING DETAIL 7
ZVP3310F
D S
ZVN3310F MR
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -300 20 50 50 15 5 8 8 8 8 -100 -1.5 -3.5 -20 -1 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 75 -1.2
± 20
UNIT V mA A V mW °C
330 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
MAX. UNIT CONDITIONS. V V nA
µA µA
ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) VDS=-25 V, VGS=-10V VGS=-10V, ID=-150mA VDS=-25V, ID=-150mA
mA
Ω
Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf
mS pF pF pF ns ns ns ns
VDS=-25V, VGS=0V, f=1MHz
VDD ≈ -25V, ID=-150mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω ...
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