P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω
ZVP3306A
D G
S
...
Description
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω
ZVP3306A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60
E-Line TO92 Compatible VALUE -160 -1.6
± 20
UNIT V mA A V mW °C
625 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -400 14 60 50 25 8 8 8 8 8 -60 -1.5 -3.5 20 -0.5 -50 MAX. UNIT CONDITIONS. V V nA
µA µA
ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) VDS=-18 V, VGS=-10V VGS=-10V,ID=-200mA VDS=-18V,ID=-200mA
mA
Ω
Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf
mS pF pF pF ns ns ns ns
VDS=-18V, VGS=0V, f=1MHz
VDD ≈ -18V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-429 Switching times measured with 50Ω source impedance and <5ns rise time o...
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