ZVP2110G

SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω 7 ZVP2110G D COMPLEMENTARY TYPE – ZVN2110G PARTMARKING DETAIL – ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 -310 -3 ± 20 UNIT V mA A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.5 20 -1 -100 MAX. UNIT CONDITIONS. V V nA µA µA ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-100 V, VGS=0 VDS=-80 V, VGS=0V, T=125°C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-375mA VDS=-25V,ID=-375mA mA Ω Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-375mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3 - 429 ZVP2110G TYPICAL CHA...