ZVP2110A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω ZVP2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -100 -230 -3 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.5 20 -1 -100 MAX. UNIT CONDITIONS. V V nA µA µA mA Ω mS pF pF pF ns ns ns ns V DD ≈ -25V, I D=-375mA V DS=-25V, V GS=0V, f=1MHz I D=-1mA, V GS=0V ID=-1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=-100 V, V GS=0 V DS=-80 V, V GS=0V, T=125°C (2) V DS=-25 V, V GS=-10V V GS=-10V,I D=-375mA V DS=-25V,I D=-375mA Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-421 Switching times measured with...