ZVP2106B

ZVP2106B MECHANICAL DATA Dimensions in mm (inches) P CHANNEL ENHANCEMENT MODE DMOS FET BVDSS ID(cont) RDS(on) - 60V 0.76A 0.5Ω 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. FEATURES 2.54 (0.100) FAST SWITCHING SPEEDS NO SECONDARY BREAKDOWN EXCELLENT TEMPERATURE STABILITY 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45° HIGH INPUT IMPEDANCE LOW CURRENT DRIVE TO39 Pin 1 – Source Pin 2 – Gate Pin 3 – Drain EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VGS VDS ID ID IDM PD PD TJ , Tstg Gate – Source Voltage Drain – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation @ TA = 25°C Power Dissipation @ TC = 25°C Operating and Storage Temperature Range (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) ±20 -60V 0.28A -0.76A -4A 0.7W 5W –55 to 150°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 11/99 ZVP2106B ELECTRICAL CHARACTERISTICS Parameter BVDSS Drain – Source Breakdown Voltage RDS(on) Static Drain – Source On–State Resistance 1 Forward Transconductance1,2 (Tamb = 25°C unless otherwise stated) Test Conditions VGS = 0 VGS = -10V VDS = VGS VDS = -18V VGS = 0 ID = - 1mA ID = 500mA ID = - 1mA ID = 500mA VDS = 0.8VDSS T = 125°C VDS = - 18V VGS = 0 2 2 M...